2N2219A

Silicon NPN small-signal transistor for general-purpose and high-speed switching applications. Central Semiconductor rates the device at 40 V collector-emitter voltage, 75 V collector-base voltage, 800 mA continuous collector current, and 800 mW power dissipation at 25 °C. The datasheet lists DC current gain up to 100 to 300 at 150 mA, transition frequency of 300 MHz, and saturation voltage as low as 0.3 V at 150 mA. It is supplied as a through-hole metal-can device with a standard box quantity of 500 pieces.