This N-channel super junction MOSFET is rated for 600 V drain-source voltage and 30.7 A continuous drain current at a 25 °C case temperature. It is housed in a TO-220 package and specifies 99 mΩ maximum drain-source on-resistance at VGS = 10 V with 75 nC typical total gate charge. The device supports 205 W power dissipation, 588 mJ single-pulse avalanche energy, and a maximum junction temperature of 150 °C. It includes a built-in ESD diode and is intended for switch mode power supplies, UPS, PFC stages, AC-DC converters, telecom equipment, and solar systems.
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SemiHow HCP60R099 technical specifications.
| Drain-Source Voltage | 600V |
| Continuous Drain Current (Tc=25°C) | 30.7A |
| Continuous Drain Current (Tc=100°C) | 19.4A |
| Pulsed Drain Current | 92A |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2.0 to 4.0V |
| Drain-Source On-Resistance (Typ) | 86mΩ |
| Drain-Source On-Resistance (Max) | 99mΩ |
| Input Capacitance | 3300pF |
| Output Capacitance | 70pF |
| Reverse Transfer Capacitance | 3.3pF |
| Turn-On Delay Time | 63ns |
| Turn-On Rise Time | 32ns |
| Turn-Off Delay Time | 281ns |
| Turn-Off Fall Time | 20ns |
| Total Gate Charge | 75nC |
| Gate-Source Charge | 14nC |
| Gate-Drain Charge | 22nC |
| Power Dissipation | 205W |
| Single Pulsed Avalanche Energy | 588mJ |
| Thermal Resistance Junction-to-Case | 0.61°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Reverse Recovery Time | 445ns |
| Diode Forward Voltage | 1.3V |
| Maximum Junction Temperature | 150°C |
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