Semikron
SEMIX101GD12E4S
IGBT MODULE, SIX, 1.2KV, 160A; Transistor Polarity:Six NPN; DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:- ;RoHS Compliant: Yes
PackageModule
MountingScrew
PolarityNPN
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Technical Specifications
Semikron SEMIX101GD12E4S technical specifications.
General
| Package/Case | Module |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Polarity | NPN |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Semikron SEMIX101GD12E4S Datasheet
Download the complete datasheet for Semikron SEMIX101GD12E4S to view detailed technical specifications.
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