IGBT, MODULE, 1.2KV, 314A, SEMIX 2S; Transistor Polarity:Dual N Channel; DC Collector Current:314A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:16 ;RoHS Compliant: Yes
Semikron SEMIX202GB12E4S technical specifications.
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Min Operating Temperature | -40°C |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
