The SK35GD126ET is a 1.2kV insulated gate bipolar transistor with a collector emitter saturation voltage of 2.1V and a maximum power dissipation of 1.05kW. It is packaged in a flange mount with dimensions of 0.472inch in height, 2.165inch in length, and 1.22inch in width. The device operates within a temperature range of -40°C to 150°C and is compliant with RoHS regulations.
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| Package/Case | T |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 2.1V |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 0.472inch |
| Length | 2.165inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.05kW |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 1.22inch |
| RoHS | Compliant |
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