Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, CASE D15, SEMITRANS-4
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| Package/Case | Module |
| Continuous Drain Current (ID) | 200A |
| Drain to Source Voltage (Vdss) | 100V |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 30mm |
| Input Capacitance | 10pF |
| Length | 78mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 700W |
| Mount | Panel, Screw |
| Nominal Vgs | 3V |
| Number of Elements | 1 |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 270ns |
| Turn-On Delay Time | 60ns |
| Width | 42mm |
| RoHS | Compliant |
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