Insulated Gate Bipolar Transistor, 229A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS 3, 7 PIN
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| Collector Emitter Breakdown Voltage | 940mV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| RoHS | Compliant |
