Semikron
SKM400GB12E4
Insulated Gate Bipolar Transistor, 618A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
Insulated Gate Bipolar Transistor, 618A I(C), 1200V V(BR)CES, N-Channel, CASE D56, SEMITRANS-7
PackageModule
MountingScrew
PolarityN-CHANNEL
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Technical Specifications
Semikron SKM400GB12E4 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Saturation Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Fall Time | 60ns |
| Height | 30.5mm |
| Length | 106.4mm |
| Max Collector Current | 618A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Mount | Screw |
| Polarity | N-CHANNEL |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | Screw |
| Width | 61.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Semikron SKM400GB12E4 Datasheet
Download the complete datasheet for Semikron SKM400GB12E4 to view detailed technical specifications.
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