The Semitec ZS1022 is a bidirectional silicon transient voltage suppressor diode with a breakdown voltage range of 19.8 to 24.2V and a maximum non-repetitive peak reverse power dissipation of 2000W. It has a maximum power dissipation of 1W and is available in a 2-terminal package type R-PDSO-C2. The diode element is made of silicon and has a dual terminal position. It is suitable for use in applications where transient voltage suppression is required.
PolarityBIDIRECTIONAL
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Technical Specifications
Semitec ZS1022 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 19.8 |
| Non-rep Peak Rev Power Dis-Max | 2000 |
| Breakdown Voltage-Max | 24.2 |
| Power Dissipation-Max | 1 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
Datasheet
Semitec ZS1022 Datasheet
Download the complete datasheet for Semitec ZS1022 to view detailed technical specifications.
No datasheet is available for this part.