This silicon transient voltage suppressor diode features a maximum reverse voltage of 98.8V and a non-repetitive peak reverse power dissipation of 1500W. The diode has a nominal breakdown voltage of 130V and a maximum clamping voltage of 187V. It is a unidirectional device with a silicon diode element and is available in a 2-terminal package with terminals at the end.
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Semtech JAN1N6169US technical specifications.
| Number of Terminals | 2 |
| Terminal Position | END |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 98.8 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 187 |
| Breakdown Voltage-Nom | 130 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
