This silicon transient voltage suppressor diode features a breakdown voltage of at least 135V and a maximum non-repetitive peak reverse power dissipation of 500mW. The device is a unidirectional diode with a maximum clamping voltage of 206.3V and a maximum power dissipation of 1.5W. It is available in a 2-pin package type O-XELF-N2.
PolarityUNIDIRECTIONAL
Quick Jump:
Technical Specifications
Semtech JANS1N6134US technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 114 |
| Breakdown Voltage-Min | 135 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 206.3 |
| Breakdown Voltage-Nom | 150 |
| Power Dissipation-Max | 1.5 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | True |
Datasheet
Semtech JANS1N6134US Datasheet
Download the complete datasheet for Semtech JANS1N6134US to view detailed technical specifications.
No datasheet is available for this part.