This unidirectional silicon transient voltage suppressor diode features a breakdown voltage of at least 108V and a maximum non-repetitive peak reverse power dissipation of 1500W. The device is constructed with a hermetically sealed, surface mount package. Operating temperatures range from -55°C to 150°C.
PolarityUNIDIRECTIONAL
Quick Jump:
Technical Specifications
Semtech JANTX1N6168US technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 91 |
| Breakdown Voltage-Min | 108 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 173 |
| Power Dissipation-Max | 7.5 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | True |
Datasheet
Semtech JANTX1N6168US Datasheet
Download the complete datasheet for Semtech JANTX1N6168US to view detailed technical specifications.
No datasheet is available for this part.