The JANTXV1N6119US is a unidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 27.4V and a minimum breakdown voltage of 32.4V. It has a maximum non-repetitive peak reverse power dissipation of 500mW and a maximum clamping voltage of 52V. The diode is packaged in a hermetic sealed, surface mount package with 2 terminals. It is suitable for use in applications where transient voltage suppression is required.
Semtech JANTXV1N6119US technical specifications.
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 27.4 |
| Breakdown Voltage-Min | 32.4 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 52 |
| Breakdown Voltage-Nom | 36 |
| Power Dissipation-Max | 1.5 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | True |
Download the complete datasheet for Semtech JANTXV1N6119US to view detailed technical specifications.
No datasheet is available for this part.