This silicon unidirectional transient voltage suppressor diode features a breakdown voltage of 64.6V and a maximum non-repetitive peak reverse power dissipation of 500mW. The device is constructed with a silicon diode element and is available in a 2-pin O-XELF-N2 package. Operating temperatures range from -55°C to 150°C, making it suitable for a variety of applications.
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| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 51.7 |
| Breakdown Voltage-Min | 64.6 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 98 |
| Breakdown Voltage-Nom | 68 |
| Power Dissipation-Max | 1.5 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | True |
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