This silicon unidirectional transient voltage suppressor diode features a breakdown voltage of 130V and a maximum non-repetitive peak reverse power dissipation of 1500W. The device is packaged in a 2-pin O-XELF-N2 package and is suitable for use in applications where voltage suppression is required. The operating temperature range is not specified, and compliance information is not provided.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Semtech JANTXV1N6169US datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 98 |
| Breakdown Voltage-Min | 117 |
| Non-rep Peak Rev Power Dis-Max | 1500 |
| Clamping Voltage-Max | 187 |
| Breakdown Voltage-Nom | 130 |
| Power Dissipation-Max | 7.5 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | True |
Download the complete datasheet for Semtech JANTXV1N6169US to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
