The 1N6109US is a 2-pin unidirectional silicon TVS diode with a breakdown voltage of 12.35V and a maximum non-repetitive peak reverse power dissipation of 500mW. It is constructed with a silicon diode element and has a maximum power dissipation of 2W. The diode is available in a 2-pin O-LELF-R2 package and is suitable for transient voltage suppression applications.
PolarityUNIDIRECTIONAL
Quick Jump:
Technical Specifications
Sensitron 1N6109US technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | END |
| Pin Count | 2 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 9.9 |
| Breakdown Voltage-Min | 12.35 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Power Dissipation-Max | 2 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Sensitron 1N6109US Datasheet
Download the complete datasheet for Sensitron 1N6109US to view detailed technical specifications.
No datasheet is available for this part.