This bidirectional silicon transient voltage suppressor diode features a breakdown voltage of at least 42.3V and a maximum non-repetitive peak reverse power dissipation of 500W. The device has a maximum power dissipation of 2W and is constructed with a silicon diode element. It is available in an axial package type, specifically the O-PALF-W2 configuration.
PolarityBIDIRECTIONAL
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Technical Specifications
Sensitron 1N6122 technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Breakdown Voltage-Min | 42.3 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Power Dissipation-Max | 2 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| Lead Free | No |
| HTS Code | 8541.10.00.80 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Sensitron 1N6122 Datasheet
Download the complete datasheet for Sensitron 1N6122 to view detailed technical specifications.
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