The JAN1N6111US is a bidirectional silicon transient voltage suppressor diode with a maximum reverse voltage of 12.2V and a maximum non-repetitive peak reverse power dissipation of 500mW. It has a nominal breakdown voltage of 16V and a maximum clamping voltage of 23.5V. The diode is packaged in an O-MELF-R2 package and is suitable for use in applications where a high level of voltage suppression is required. The operating temperature range is not specified, but the diode is likely suitable for use in a wide range of temperatures. The JAN1N6111US is manufactured by Sensitron and meets the requirements of the relevant industry standards.
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| Number of Terminals | 2 |
| Terminal Position | END |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12.2 |
| Breakdown Voltage-Min | 15.2 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 23.5 |
| Breakdown Voltage-Nom | 16 |
| Power Dissipation-Max | 5 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
