This silicon bidirectional transient voltage suppressor diode features a maximum reverse voltage of 29.7V and a minimum breakdown voltage of 37.1V. It has a maximum non-repetitive peak reverse power dissipation of 500W and a maximum clamping voltage of 56.4V. The diode is constructed with a silicon material and has a nominal breakdown voltage of 39V. It is available in an O-MELF-R2 package type, suitable for surface mount applications.
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| Number of Terminals | 2 |
| Terminal Position | END |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 29.7 |
| Breakdown Voltage-Min | 37.1 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 56.4 |
| Breakdown Voltage-Nom | 39 |
| Power Dissipation-Max | 5 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | unknown |
| Military Spec | False |
