This silicon bidirectional transient voltage suppressor diode features a maximum reverse voltage of 8.4V and a minimum breakdown voltage of 9.9V. The diode has a nominal breakdown voltage of 11V and a maximum non-repetitive peak reverse power dissipation of 500mW. It is constructed with a silicon diode element and is available in an axial package type O-LALF-W2.
PolarityBIDIRECTIONAL
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Technical Specifications
Sensitron JANTXV1N6107A technical specifications.
General
| Number of Terminals | 2 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 8.4 |
| Breakdown Voltage-Min | 9.9 |
| Non-rep Peak Rev Power Dis-Max | 500 |
| Clamping Voltage-Max | 15.6 |
| Breakdown Voltage-Nom | 11 |
Compliance
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Sensitron JANTXV1N6107A Datasheet
Download the complete datasheet for Sensitron JANTXV1N6107A to view detailed technical specifications.
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