The S16C12-8-G is a 16-element bidirectional silicon TVS diode with a maximum reverse voltage of 12V and a maximum non-repetitive peak reverse power dissipation of 300mW. It has a minimum breakdown voltage of 13.3V and operates over a temperature range of -55°C to 125°C. The diode is available in a 16-pin R-PDSO-G16 package.
Sensitron S16C12-8-G technical specifications.
| Max Operating Temperature | 125 |
| Number of Terminals | 16 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Pin Count | 16 |
| Number of Elements | 16 |
| Polarity | BIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 12 |
| Breakdown Voltage-Min | 13.3 |
| Non-rep Peak Rev Power Dis-Max | 300 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
