The GP2S27T2J00F phototransistor from Sharp is a surface mount device with a maximum operating temperature of 85°C and a minimum operating temperature of -25°C. It has a collector-emitter breakdown voltage of 35V and a forward current of 20mA. The device is RoHS compliant and has a response time of 20us. It is available in a package quantity of 1000 units, packaged in cut tape. The phototransistor has a sensing distance of 1mm and operates at a wavelength of 950nm.
Sharp GP2S27T2J00F technical specifications.
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Collector-emitter Voltage-Max | 35V |
| Fall Time | 20us |
| Forward Current | 20mA |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Type | Phototransistor |
| Package Quantity | 1000 |
| Packaging | Cut Tape |
| Power Dissipation | 100mW |
| Response Time | 20us |
| Reverse Breakdown Voltage | 6V |
| Reverse Voltage | 6V |
| RoHS Compliant | Yes |
| Sensing Distance | 1mm |
| Wavelength | 950nm |
| RoHS | Compliant |
No datasheet is available for this part.
