The GP2S27T3J00F is a surface mount phototransistor from Sharp with a collector emitter breakdown voltage of 35V and a maximum collector current of 20mA. It has a response time of 20us and an output power of 75mW. The device is lead free and RoHS compliant, with a maximum operating temperature of 85°C and a minimum operating temperature of -25°C. It is packaged in a cut tape format.
PackageSMD/SMT
MountingSurface Mount
Power75mW
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Technical Specifications
Sharp GP2S27T3J00F technical specifications.
General
| Package/Case | SMD/SMT |
| Collector Emitter Breakdown Voltage | 35V |
| Collector Emitter Voltage (VCEO) | 35V |
| Fall Time | 100000ns |
| Forward Current | 50mA |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 35V |
| Max Collector Current | 20mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Output Power | 75mW |
| Output Type | Phototransistor |
| Packaging | Cut Tape |
| Power Dissipation | 100mW |
| Response Time | 20us |
| Reverse Breakdown Voltage | 6V |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Sharp GP2S27T3J00F Datasheet
Download the complete datasheet for Sharp GP2S27T3J00F to view detailed technical specifications.
No datasheet is available for this part.
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