The PC817-B is a general purpose NPN transistor with a collector emitter saturation voltage of 200mV and a collector emitter voltage of 35V. It has a current transfer ratio of 260% and a forward current of 50mA. The device is packaged in a PDIP package and is suitable for through hole mounting. It can operate over a temperature range of -30°C to 100°C and has a power dissipation of 200mW.
PackagePDIP
MountingThrough Hole
Power200mW
Quick Jump:
Technical Specifications
Sharp PC817-B technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 35V |
| Current Transfer Ratio | 260% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -30°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 6V |
Compliance
| RoHS | Not Compliant |
Datasheet
Sharp PC817-B Datasheet
Download the complete datasheet for Sharp PC817-B to view detailed technical specifications.
No datasheet is available for this part.
Product Images
