
General purpose NPN phototransistor with a 800nm wavelength and 35° viewing angle. Features a radial package with a domed lens style, suitable for through-hole mounting. Offers a maximum collector current of 20mA and a collector-emitter breakdown voltage of 35V. Operates within a temperature range of -25°C to 85°C, with a maximum power dissipation of 75mW and a fall time of 3.5µs. RoHS compliant and lead-free.
Sharp PT4800E0000F technical specifications.
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