Schottky barrier diode for low-capacitance signal and RF applications. At 25 °C it is rated for 70 V reverse voltage and 70 mA forward current, with typical junction capacitance of 1.5 pF. The diode shows approximately 380 mV forward voltage at 1 mA and 690 mV at 10 mA. It is listed in the AF-Schottky Diodes/RF-Schottky Diodes section and supplied in a 3-lead SOT-23 style package.
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Siemens BAS70 technical specifications.
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 70 |
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | unknown |
| Military Spec | False |
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