This device is a PNP silicon AF transistor intended for general-purpose AF applications. It is supplied in a SOT-23 package with 45 V collector-emitter breakdown voltage, 500 mA continuous collector current, and 1 A peak collector current capability. The BC807-40 gain group provides high DC current gain, with hFE specified from 250 to 630 depending on test current. The transistor is rated for junction temperatures up to 150 °C and features low collector-emitter saturation voltage for switching use. Complementary NPN types are BC817 and BC818.
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| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Pin Count | 3 |
| Number of Elements | 1 |
| RoHS | No |
| Eccn Code | EAR99 |
| HTS Code | 8541.21.00.75 |
| REACH | unknown |
| Military Spec | False |
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