The HYB5117805BSJ-60 is a 28-pin commercial temperature EDO DRAM IC from Siemens, operating within a temperature range of 0 to 70 degrees Celsius. It features a 5V nominal supply voltage and a maximum supply voltage of 5.5V. The device has a maximum access time of 60 nanoseconds and a memory capacity of 2097152 words. It is packaged in a 28-pin R-PDSO-J28 package, suitable for surface mount applications.
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Siemens HYB5117805BSJ-60 technical specifications.
| Max Operating Temperature | 70 |
| Number of Terminals | 28 |
| Min Operating Temperature | 0 |
| Terminal Position | DUAL |
| JEDEC Package Code | R-PDSO-J28 |
| Pin Count | 28 |
| Number of Functions | 1 |
| Temperature Grade | COMMERCIAL |
| Supply Voltage-Nom (Vsup) | 5 |
| Supply Voltage-Max (Vsup) | 5.5 |
| Supply Voltage-Min (Vsup) | 4.5 |
| Number of Words | 2097152 |
| Number of Words Code | 2000000 |
| Memory IC Type | EDO DRAM |
| Number of Ports | 1 |
| Access Time-Max | 60 |
| Eccn Code | EAR99 |
| HTS Code | 8542.32.00.02 |
| REACH | unknown |
| Military Spec | False |
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