The 2SD882O is a single NPN bipolar junction transistor with a maximum collector-base voltage of 40V and a maximum collector-emitter voltage of 30V. It can handle a maximum DC collector current of 3A and a maximum power dissipation of 10000mW. The transistor is made of silicon material and has a minimum DC current gain of 100 at 1A and 2V. The 2SD882O operates within a temperature range of -55°C to 150°C.
Sign in to ask questions about the Silicon First International 2SD882O datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Silicon First International 2SD882O technical specifications.
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 40V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 10000mW |
| Material | Si |
| Minimum DC Current Gain | 100@1A@2V |
| Maximum Transition Frequency | 90(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Silicon First International 2SD882O to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
