Trans GP BJT NPN 30V 3A 3-Pin TO-126
Sign in to ask questions about the Silicon First International 2SD882G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Silicon First International 2SD882G technical specifications.
| Basic Package Type | Through Hole |
| Package Family Name | TO-225-AA |
| Package/Case | TO-126 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 40V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 10000mW |
| Material | Si |
| Minimum DC Current Gain | 200@1A@2V |
| Maximum Transition Frequency | 90(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Silicon First International 2SD882G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
