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Technical Specifications
Silicon First International 2SD882R technical specifications.
General
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 40V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 10000mW |
| Material | Si |
| Minimum DC Current Gain | 60@1A@2V |
| Maximum Transition Frequency | 90(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Silicon First International 2SD882R Datasheet
Download the complete datasheet for Silicon First International 2SD882R to view detailed technical specifications.
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