The 2SD882SR is a single NPN bipolar junction transistor from Silicon First International. It has a maximum collector-base voltage of 40V, maximum emitter-base voltage of 5V, and maximum collector-emitter voltage of 30V. The transistor can handle a maximum DC collector current of 3A and a maximum power dissipation of 10W. It is made from silicon material and has a minimum DC current gain of 60 at 1A and 2V. The 2SD882SR operates over a temperature range of -55°C to 150°C.
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Silicon First International 2SD882SR technical specifications.
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 40V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 30V |
| Maximum DC Collector Current | 3A |
| Maximum Power Dissipation | 10000mW |
| Material | Si |
| Minimum DC Current Gain | 60@1A@2V |
| Maximum Transition Frequency | 90(Typ)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| ECCN | EAR99 |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Download the complete datasheet for Silicon First International 2SD882SR to view detailed technical specifications.
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