Single-channel, unidirectional gate driver with 600mA high-level output current and 400mA low-level output current. Features 50ns propagation delay and 60ns turn-on delay time with 10ns pulse width distortion. Operates from a 5V to 30V supply voltage, with a maximum power dissipation of 300mW and typical 75mW. Packaged in SOIC for surface mount applications, this RoHS compliant component is rated for -40°C to 125°C and holds CSA, VDE, UR, and CQC approvals.
PackageSOIC
Current2mA
MountingSurface Mount
Power75mW
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Technical Specifications
Silicon Labs Si8261ABC-C-ISR technical specifications.
General
Approvals
CSA, VDE, UR, CQC
Package/Case
SOIC
Channel Type
Unidirectional
High Level Output Current
600mA
Isolated Power
No
Low Level Output Current
400mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Output Current
600mA
Max Power Dissipation
300mW
Max Supply Voltage
30V
Min Supply Voltage
5V
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Power Dissipation
75mW
Propagation Delay
50ns
Pulse Width Distortion (PWD)
10ns
RoHS Compliant
Yes
Series
Si8261ABC
Supply Current
2mA
Turn-On Delay Time
60ns
Type
General Purpose
Compliance
RoHS
Compliant
Datasheet
Silicon Labs Si8261ABC-C-ISR Datasheet
Download the complete datasheet for Silicon Labs Si8261ABC-C-ISR to view detailed technical specifications.
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