Single-channel, unidirectional gate driver with 600mA high-level output current and 400mA low-level output current. Features 50ns propagation delay and 60ns turn-on delay time with 10ns pulse width distortion. Operates from a 5V to 30V supply voltage, with a maximum power dissipation of 300mW and typical 75mW. Packaged in SOIC for surface mount applications, this RoHS compliant component is rated for -40°C to 125°C and holds CSA, VDE, UR, and CQC approvals.
Silicon Labs Si8261ABC-C-ISR technical specifications.
| Approvals | CSA, VDE, UR, CQC |
| Package/Case | SOIC |
| Channel Type | Unidirectional |
| High Level Output Current | 600mA |
| Isolated Power | No |
| Low Level Output Current | 400mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 600mA |
| Max Power Dissipation | 300mW |
| Max Supply Voltage | 30V |
| Min Supply Voltage | 5V |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 75mW |
| Propagation Delay | 50ns |
| Pulse Width Distortion (PWD) | 10ns |
| RoHS Compliant | Yes |
| Series | Si8261ABC |
| Supply Current | 2mA |
| Turn-On Delay Time | 60ns |
| Type | General Purpose |
| RoHS | Compliant |
Download the complete datasheet for Silicon Labs Si8261ABC-C-ISR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.