This device is a silicon rectifier diode in the 1N5400-1N5408 family with a 1000 V maximum repetitive peak reverse voltage rating. It is housed in a DO-201AD axial-leaded molded plastic package with matte tin plated leads and a cathode polarity band. The diode is rated for 3.0 A average forward rectified current and 200 A non-repetitive peak forward surge current. Maximum instantaneous forward voltage is 1.2 V at 3.0 A, and the operating junction temperature range is -55°C to +125°C. The package is Pb-free and RoHS-compliant according to the datasheet.
Checking distributor stock and pricing after the page loads.
| Max Operating Temperature | 125 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | AXIAL |
| Number of Elements | 1 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 1000 |
| REACH | unknown |
| Military Spec | False |
