N-channel enhancement-mode trench power MOSFET supports 100 V drain-to-source voltage and 200 A continuous drain current at 25 °C case temperature. The device has 4.7 mΩ maximum on-resistance at 10 V gate drive and 30 A drain current. D2PAK packaging is used with drain connected to the tab, and the junction operating range is -55 °C to 175 °C. Avalanche, switching, and body-diode characteristics are specified for power switching applications.
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| Channel Type | N-Channel |
| Drain-to-Source Voltage | 100V |
| Continuous Drain Current at Tc=25°C | 200A |
| Continuous Drain Current at Tc=100°C | 130A |
| Pulsed Drain Current | 800A |
| Static Drain-to-Source On-Resistance | 4.7 maxmΩ |
| Gate Threshold Voltage | 2.0 min, 4.0 maxV |
| Gate-to-Source Voltage | ±20V |
| Power Dissipation at Tc=25°C | 326W |
| Linear Derating Factor | 1.5W/°C |
| Single Pulse Avalanche Energy | 960mJ |
| Peak Diode Recovery dv/dt | 31V/ns |
| Operating Junction Temperature | -55 to +175°C |
| Storage Temperature Range | -55 to +175°C |
| Thermal Resistance Junction-to-Case | 0.46 typ°C/W |
| Thermal Resistance Junction-to-Ambient | 62 max°C/W |
| Total Gate Charge | 108 typnC |
| Gate-to-Source Charge | 24 typnC |
| Gate-to-Drain Charge | 37 typnC |
| Input Capacitance | 3150 typpF |
| Output Capacitance | 350 typpF |
| Reverse Transfer Capacitance | 240 typpF |
| Body Diode Continuous Source Current | 160 maxA |
| Body Diode Forward Voltage | 1.3 maxV |
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