This N-channel power MOSFET is rated for 100 V drain-source voltage and 120 A continuous drain current at TC=25°C. It is housed in a TO-263-2 package and specifies a maximum on-resistance of 4.3 mΩ at 10 V gate drive. The gate-source rating is ±20 V, with a 2 to 4 V gate threshold range and 16.6 A continuous drain current at TA=25°C. Typical dynamic characteristics include 72 nC total gate charge at 10 V, 4700 pF input capacitance, 815 pF output capacitance, and 80 pF reverse transfer capacitance.
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Sinopower Semiconductor SM1A52NHG technical specifications.
| Channel Type | N |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 120A |
| Continuous Drain Current (TA=25°C) | 16.6A |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Typ | 3V |
| Gate Threshold Voltage Max | 4V |
| Drain-Source On-Resistance Max @ VGS=10V | 4.3mΩ |
| Gate Resistance Typ | 1Ω |
| Input Capacitance Typ | 4700pF |
| Output Capacitance Typ | 815pF |
| Reverse Transfer Capacitance Typ | 80pF |
| Total Gate Charge Typ @ VGS=10V | 72nC |
| Total Gate Charge Max @ VGS=10V | 100nC |
| Gate-Source Charge | 27nC |
| Gate-Drain Charge | 16nC |
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