N-channel enhancement-mode MOSFET provides a 100 V drain-source breakdown rating and high continuous drain current capability. The device has a maximum on-resistance of 4.8 mΩ at a 10 V gate drive. Gate charge is specified at 77 nC typical and 108 nC maximum at 10 V. The TO-220 package supports through-hole power switching use with tube packaging documentation available.
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| FET Type | N-channel |
| Drain-Source Breakdown Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current at Tc=25°C | 120A |
| Continuous Drain Current at Ta=25°C | 14A |
| Gate Threshold Voltage Minimum | 2V |
| Gate Threshold Voltage Typical | 3V |
| Gate Threshold Voltage Maximum | 4V |
| Drain-Source On-Resistance at 10 V Maximum | 4.8mΩ |
| Gate Resistance Typical | 2Ω |
| Input Capacitance Typical | 4450pF |
| Output Capacitance Typical | 1420pF |
| Reverse Transfer Capacitance Typical | 50pF |
| Total Gate Charge at 10 V Typical | 77nC |
| Total Gate Charge at 10 V Maximum | 108nC |
| Gate-Source Charge | 20nC |
| Gate-Drain Charge | 18nC |
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