This N-channel MOSFET is specified for 100 V drain-source voltage and ±20 V gate-source voltage. It is offered in a TO-LL package and is listed as New on the manufacturer product page. Continuous drain current is rated at 150 A at TC = 25°C and 17.2 A at TA = 25°C. The device has a maximum on-resistance of 4.2 mΩ at VGS = 10 V, a typical gate resistance of 2 Ω, and typical capacitances of 4600 pF Ciss, 720 pF Coss, and 50 pF Crss. Typical total gate charge is 72 nC at 10 V with a 101 nC maximum, with Qgs of 25 nC and Qgd of 15 nC.
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Sinopower Semiconductor SM1A57NHL technical specifications.
| Transistor polarity | N |
| Drain-source voltage | 100V |
| Gate-source voltage | ±20V |
| Continuous drain current (TC=25°C) | 150A |
| Continuous drain current (TA=25°C) | 17.2A |
| Gate threshold voltage min | 2V |
| Gate threshold voltage typ | 3V |
| Gate threshold voltage max | 4V |
| RDS(on) max at VGS=10V | 4.2mΩ |
| Gate resistance typ | 2Ω |
| Input capacitance typ | 4600pF |
| Output capacitance typ | 720pF |
| Reverse transfer capacitance typ | 50pF |
| Total gate charge typ at 10V | 72nC |
| Total gate charge max at 10V | 101nC |
| Gate-source charge | 25nC |
| Gate-drain charge | 15nC |
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