This N-channel MOSFET is specified for 100 V drain-source voltage and ±20 V gate-source voltage. It is offered in a TO-263-2 package and is listed with a 120 A continuous drain current at TC = 25°C and 18 A at TA = 25°C. The device shows a maximum RDS(on) of 4.2 mΩ at 10 V gate drive, with a threshold voltage range of 2 V to 4 V. Typical input, output, and reverse-transfer capacitances are 4575 pF, 735 pF, and 97 pF, and total gate charge at 10 V is 72 nC typical and 101 nC maximum.
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Sinopower Semiconductor SM1A76NHG technical specifications.
| Configuration | N |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 120A |
| Continuous Drain Current (TA=25°C) | 18A |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Typ | 3V |
| Gate Threshold Voltage Max | 4V |
| RDS(on) Max at VGS=10V | 4.2mΩ |
| Gate Resistance Typ | 1.6Ω |
| Input Capacitance Typ | 4575pF |
| Output Capacitance Typ | 735pF |
| Reverse Transfer Capacitance Typ | 97pF |
| Total Gate Charge Typ at 10V | 72nC |
| Total Gate Charge Max at 10V | 101nC |
| Gate-Source Charge | 22nC |
| Gate-Drain Charge | 17nC |
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