DDR DRAM, 16MX32, 5ns, CMOS, PBGA90, 8 X 13 MM, 1 MM HEIGHT, 0.80 MM PITCH, HALOGEN AND LEAD FREE, FBGA-90
SK Hynix H5MS5132DFR-E3M technical specifications.
| Max Operating Temperature | 85 |
| Number of Terminals | 90 |
| Min Operating Temperature | -30 |
| Terminal Position | BOTTOM |
| JEDEC Package Code | R-PBGA-B90 |
| Width | 8 |
| Length | 13 |
| Pin Count | 90 |
| Number of Functions | 1 |
| Temperature Grade | OTHER |
| Supply Voltage-Nom (Vsup) | 1.8 |
| Supply Voltage-Max (Vsup) | 1.95 |
| Supply Voltage-Min (Vsup) | 1.7 |
| Supply Current-Max | 0.13 |
| Number of Words | 16777216 |
| Number of Words Code | 16000000 |
| Memory IC Type | DDR DRAM |
| Number of Ports | 1 |
| Standby Current-Max | 0.0003 |
| Access Time-Max | 5 |
| Clock Frequency-Max (fCLK) | 200 |
| I/O Type | COMMON |
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| HTS Code | 8542.32.00.28 |
| REACH | Compliant |
| Military Spec | False |
No datasheet is available for this part.
