DDR3 SDRAM memory chip with 2 Gbit density, organized as 256Mx8. Features an 8-bit data bus width and a maximum clock rate of 1866 MHz. Operates at a typical supply voltage of 1.5V, with a 1.575V maximum and 1.425V minimum. Housed in an 82-pin FBGA package with a 0.8mm pin pitch, this surface-mount component offers 8 internal banks and a maximum access time of 20 ns.
PackageFBGA
MountingSurface Mount
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Technical Specifications
SK Hynix H5TQ2G83BFR-RDC technical specifications.
General
Basic Package Type
Ball Grid Array
Package Family Name
BGA
Package/Case
FBGA
Package Description
Fine Pitch Ball Grid Array
Lead Shape
Ball
Pin Count
82
PCB
82
Package Length (mm)
11.1
Package Width (mm)
9.4
Package Height (mm)
0.76
Seated Plane Height (mm)
1.1
Pin Pitch (mm)
0.8
Package Material
Plastic
Mounting
Surface Mount
Density
2Gbit
Type
DDR3 SDRAM
Organization
256Mx8
Data Bus Width
8bit
Maximum Clock Rate
1866MHz
Number of Internal Banks
8
Number of Words per Bank
32M
Maximum Access Time
20ns
Density in Bits
2147483648bit
Address Bus Width
18bit
Maximum Operating Current
124mA
Typical Operating Supply Voltage
1.5V
Max Operating Supply Voltage
1.575V
Min Operating Supply Voltage
1.425V
Min Operating Temperature
0°C
Max Operating Temperature
85°C
Compliance
Cage Code
9162F
EU RoHS
Yes
HTS Code
8542320036
Schedule B
8542320023
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2002/95/EC
Datasheet
SK Hynix H5TQ2G83BFR-RDC Datasheet
Download the complete datasheet for SK Hynix H5TQ2G83BFR-RDC to view detailed technical specifications.
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