This silicon transient voltage suppressor diode features a breakdown voltage of 11.4V to 12.6V and a maximum power dissipation of 5W. It has a unidirectional polarity and is constructed from a single silicon diode element. The device is available in a 1-pin package type, O-MUPM-X1, suitable for surface mount applications.
Sign in to ask questions about the Solid State Devices ST1000B12CS datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Solid State Devices ST1000B12CS technical specifications.
| Number of Terminals | 1 |
| Terminal Position | UPPER |
| Pin Count | 1 |
| Number of Elements | 1 |
| Polarity | UNIDIRECTIONAL |
| Diode Element Material | SILICON |
| Diode Type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Rep Pk Reverse Voltage-Max | 10 |
| Breakdown Voltage-Min | 11.4 |
| Non-rep Peak Rev Power Dis-Max | 1000 |
| Breakdown Voltage-Max | 12.6 |
| Power Dissipation-Max | 5 |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.50 |
| REACH | Compliant |
| Military Spec | True |
Download the complete datasheet for Solid State Devices ST1000B12CS to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
