N-Channel Silicon JFET for small signal applications. Features 90V drain-to-source voltage (Vdss) and 900mA continuous drain current (ID). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 6.25W. Through-hole mounting in a TO-205AF package. Includes 1.5V threshold voltage and 8ns turn-on delay.
PackageTO-205AF
MountingThrough Hole
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Technical Specifications
Solid State 2N6661 technical specifications.
General
Package/Case
TO-205AF
Continuous Drain Current (ID)
900mA
Drain to Source Voltage (Vdss)
90V
Gate to Source Voltage (Vgs)
40V
Height
4.57mm
Input Capacitance
50pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
6.25W
Mount
Through Hole
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.5V
Turn-Off Delay Time
10ns
Turn-On Delay Time
8ns
Compliance
RoHS
Compliant
Datasheet
Solid State 2N6661 Datasheet
Download the complete datasheet for Solid State 2N6661 to view detailed technical specifications.
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