N-Channel Silicon JFET for small signal applications. Features 90V drain-to-source voltage (Vdss) and 900mA continuous drain current (ID). Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 6.25W. Through-hole mounting in a TO-205AF package. Includes 1.5V threshold voltage and 8ns turn-on delay.
PackageTO-205AF
MountingThrough Hole
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Technical Specifications
Solid State 2N6661 technical specifications.
General
| Package/Case | TO-205AF |
| Continuous Drain Current (ID) | 900mA |
| Drain to Source Voltage (Vdss) | 90V |
| Gate to Source Voltage (Vgs) | 40V |
| Height | 4.57mm |
| Input Capacitance | 50pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 6.25W |
| Mount | Through Hole |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1.5V |
| Turn-Off Delay Time | 10ns |
| Turn-On Delay Time | 8ns |
Compliance
| RoHS | Compliant |
Datasheet
Solid State 2N6661 Datasheet
Download the complete datasheet for Solid State 2N6661 to view detailed technical specifications.
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