PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 300V collector-emitter voltage, 1A maximum collector current, and 10000mW power dissipation. Housed in a 3-pin TO-39 metal package with a maximum height of 6.6mm and diameter of 9.4mm. Operates across a temperature range of -65°C to 200°C.
PackageTO-39
MountingThrough Hole
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Technical Specifications
Solitron Devices 2N5416 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-205-AF
Package/Case
TO-39
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Package Height (mm)
6.6(Max)
Seated Plane Height (mm)
6.6(Max)
Pin Pitch (mm)
2.67(Max)
Package Diameter (mm)
9.4(Max)
Package Material
Metal
Mounting
Through Hole
Jedec
TO-39
Type
PNP
Maximum Collector Base Voltage
350V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
300V
Maximum DC Collector Current
1A
Maximum Power Dissipation
10000mW
Minimum DC Current Gain
2.5@5mA@10V|3@10mA@10V
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
200°C
Compliance
Cage Code
21845
Schedule B
8541290080
ECCN
EAR99
RoHS Versions
2002/95/EC
Datasheet
Solitron Devices 2N5416 Datasheet
Download the complete datasheet for Solitron Devices 2N5416 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.