PNP Bipolar Junction Transistor (BJT) for through-hole mounting. Features a 300V collector-emitter voltage, 1A maximum collector current, and 10000mW power dissipation. Housed in a 3-pin TO-39 metal package with a maximum height of 6.6mm and diameter of 9.4mm. Operates across a temperature range of -65°C to 200°C.
PackageTO-39
MountingThrough Hole
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Technical Specifications
Solitron Devices 2N5416 technical specifications.
General
| Basic Package Type | Through Hole |
| Package Family Name | TO-205-AF |
| Package/Case | TO-39 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 3 |
| PCB | 3 |
| Package Height (mm) | 6.6(Max) |
| Seated Plane Height (mm) | 6.6(Max) |
| Pin Pitch (mm) | 2.67(Max) |
| Package Diameter (mm) | 9.4(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Jedec | TO-39 |
| Type | PNP |
| Maximum Collector Base Voltage | 350V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 300V |
| Maximum DC Collector Current | 1A |
| Maximum Power Dissipation | 10000mW |
| Minimum DC Current Gain | 2.5@5mA@10V|3@10mA@10V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | 21845 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| RoHS Versions | 2002/95/EC |
Datasheet
Solitron Devices 2N5416 Datasheet
Download the complete datasheet for Solitron Devices 2N5416 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.