The MJB42CT4G is a NPN transistor with a collector-emitter breakdown voltage of 350V and a maximum collector current of 4A. It has a maximum power dissipation of 100W and is packaged in a TO-220-3 case for through-hole mounting. The device is lead-free and compliant with RoHS regulations. The transistor is rated for operation at a DC voltage of -100V and has a maximum collector-emitter voltage of 1.5V. It is available in a rail or tube packaging format.
PackageTO-220-3
Current Rating-6A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics MJB42CT4G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Emitter Breakdown Voltage | 350V |
| Collector-emitter Voltage-Max | 1.5V |
| Current Rating | -6A |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Power Dissipation | 100W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Reach SVHC Compliant | Yes |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics MJB42CT4G Datasheet
Download the complete datasheet for Stmicroelectronics MJB42CT4G to view detailed technical specifications.
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