The NAND08GW3B2AN6E is a 31-bit parallel NAND flash memory with a density of 8Gb. It operates over a temperature range of -40°C to 85°C and is supplied with a voltage between 2.7V and 3.6V. The memory is packaged in a TSOP package and is available in a tray packaging format. The device is RoHS compliant and is not radiation hardened.
Stmicroelectronics NAND08GW3B2AN6E technical specifications.
| Address Bus Width | 31b |
| Package/Case | TSOP |
| Data Bus Width | 8b |
| Density | 8Gb |
| Interface | Parallel |
| Max Operating Temperature | 85°C |
| Max Supply Voltage | 3.6V |
| Memory Size | 8Gb |
| Memory Type | NAND, |
| Min Operating Temperature | -40°C |
| Min Supply Voltage | 2.7V |
| Package Quantity | 576 |
| Packaging | Tray |
| Page Size | 2KB |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NAND08G-B |
| RoHS | Compliant |
No datasheet is available for this part.
