N-channel Insulated Gate Bipolar Transistor (IGBT) featuring 600V Collector Emitter Breakdown Voltage and 6A Continuous Collector Current. This device offers a 1.9V Collector Emitter Saturation Voltage and a 21ns Reverse Recovery Time, with a 12ns Turn-On Delay Time and 40ns Turn-Off Delay Time. Designed for surface mounting in a DPAK package, it supports a maximum power dissipation of 56W and operates within a temperature range of -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
PackageDPAK
Current Rating15A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD6NC60HDT4 technical specifications.
General
| Package/Case | DPAK |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.9V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 2.5V |
| Continuous Collector Current | 6A |
| Current Rating | 15A |
| Height | 2.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Breakdown Voltage | 600V |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 56W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Reverse Recovery Time | 21ns |
| RoHS Compliant | Yes |
| Series | PowerMESH™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| Weight | 0.012346oz |
| Width | 6.2mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STGD6NC60HDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD6NC60HDT4 to view detailed technical specifications.
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