N-channel Insulated Gate Bipolar Transistor (IGBT) featuring 600V Collector Emitter Breakdown Voltage and 6A Continuous Collector Current. This device offers a 1.9V Collector Emitter Saturation Voltage and a 21ns Reverse Recovery Time, with a 12ns Turn-On Delay Time and 40ns Turn-Off Delay Time. Designed for surface mounting in a DPAK package, it supports a maximum power dissipation of 56W and operates within a temperature range of -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
PackageDPAK
Current Rating15A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STGD6NC60HDT4 technical specifications.
General
Package/Case
DPAK
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.9V
Collector Emitter Voltage (VCEO)
600V
Collector-emitter Voltage-Max
2.5V
Continuous Collector Current
6A
Current Rating
15A
Height
2.4mm
Input Type
STANDARD
Lead Free
Lead Free
Length
6.6mm
Max Breakdown Voltage
600V
Max Collector Current
15A
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
56W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Radiation Hardening
No
Reverse Recovery Time
21ns
RoHS Compliant
Yes
Series
PowerMESH™
Turn-Off Delay Time
40ns
Turn-On Delay Time
12ns
DC Rated Voltage
600V
Weight
0.012346oz
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STGD6NC60HDT4 Datasheet
Download the complete datasheet for Stmicroelectronics STGD6NC60HDT4 to view detailed technical specifications.
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