N-channel power MOSFET uses MDmesh M6 super-junction technology for switching applications, LLC converters, and boost PFC converters. The device is rated for 600 V drain-source breakdown voltage, 25 A continuous drain current at 25 °C case temperature, and 190 W total power dissipation. Typical on-resistance is 105 mΩ at 10 V gate drive and 12.5 A drain current, with 125 mΩ maximum specified. The I²PAK through-hole package is supplied in tube packing and supports a -55 °C to 150 °C operating junction temperature range.
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| FET Type | N-channel |
| Technology | MDmesh M6 |
| Drain-Source Breakdown Voltage | 600V |
| Continuous Drain Current at 25 °C Case | 25A |
| Continuous Drain Current at 100 °C Case | 15.8A |
| Pulsed Drain Current | 78A |
| Static Drain-Source On-Resistance Typical | 105mΩ |
| Static Drain-Source On-Resistance Maximum | 125mΩ |
| Gate-Source Voltage | ±25V |
| Gate Threshold Voltage | 3.25 to 4.75V |
| Total Power Dissipation at 25 °C Case | 190W |
| Operating Junction Temperature Range | -55 to 150°C |
| Junction-to-Case Thermal Resistance | 0.66°C/W |
| Input Capacitance Typical | 1515pF |
| Output Capacitance Typical | 128pF |
| Reverse Transfer Capacitance Typical | 4.2pF |
| Total Gate Charge Typical | 33.4nC |
| Package | I²PAK |
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