P-channel MOSFET, 60V drain-source breakdown voltage, 12A continuous drain current, and 200mΩ maximum drain-source on-resistance. Features a TO-220 package for through-hole mounting, 60W power dissipation, and operates within a -55°C to 175°C temperature range. Includes 10ns fall time, 20ns turn-on delay, and 40ns turn-off delay. RoHS compliant.
PackageTO-220
Current Rating-12A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STP12PF06 technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
12A
Current Rating
-12A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Dual Supply Voltage
60V
Fall Time
10ns
Gate to Source Voltage (Vgs)
20V
Height
9.15mm
Input Capacitance
850pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Nominal Vgs
3.4V
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
200mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Termination
Through Hole
Threshold Voltage
3.4V
Turn-Off Delay Time
40ns
Turn-On Delay Time
20ns
DC Rated Voltage
-60V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP12PF06 Datasheet
Download the complete datasheet for Stmicroelectronics STP12PF06 to view detailed technical specifications.
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