N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 4A continuous drain current, and 2 Ohm maximum drain-source on-resistance. Features a TO-220 package for through-hole mounting, 70W maximum power dissipation, and a 3.75V nominal gate-source threshold voltage. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Includes 16.5ns fall time, 29ns turn-off delay, and 12ns turn-on delay. RoHS compliant.
PackageTO-220
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4NK60Z technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2R |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 2R |
| Dual Supply Voltage | 600V |
| Fall Time | 16.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Nominal Vgs | 3.75V |
| Number of Elements | 1 |
| On-State Resistance | 2R |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Radiation Hardening | No |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Threshold Voltage | 3.75V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 12ns |
| DC Rated Voltage | 600V |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP4NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STP4NK60Z to view detailed technical specifications.
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