N-channel SuperMESH™ Power MOSFET, 600V drain-source breakdown voltage, 4A continuous drain current, and 2 Ohm maximum drain-source on-resistance. Features a TO-220 package for through-hole mounting, 70W maximum power dissipation, and a 3.75V nominal gate-source threshold voltage. Operates from -55°C to 150°C with a 30V gate-source voltage rating. Includes 16.5ns fall time, 29ns turn-off delay, and 12ns turn-on delay. RoHS compliant.
PackageTO-220
Current Rating4A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP4NK60Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
2R
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
2R
Dual Supply Voltage
600V
Fall Time
16.5ns
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
510pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Nominal Vgs
3.75V
Number of Elements
1
On-State Resistance
2R
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
2R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
29ns
Turn-On Delay Time
12ns
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP4NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STP4NK60Z to view detailed technical specifications.
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